Unisantis Electronics has developed the following patented technologies for licensing:
Stacked Dynamic Flash Memory (DFM)
Stacked DFM is a capacitor-less alternative/supplement to traditional 1T1C DRAM, the workhorse memory of the industry.
Stacked DFM offers significant bit cost (Gb/mm2) improvements over DRAM. It promises more bandwidth and power efficient operation, thanks to very low leakage and non-destructive reads.
Key-shaped Floating Body Memory (KFBM)
KFBM is a capacitor-less alternative to embedded 1T1C DRAM (eDRAM) and high-density embedded SRAM (eSRAM).
KFBM offers 5X the density of embedded SRAM with better scalability than both eDRAM and eSRAM. This makes KFBM ideal for use in SoCs which require high density memory to implement L3 or SLC/LLC caches, as well as large, low latency bulk random access memories to store code and data on-chip, as used in AI and ML at the edge, frame buffers, etc.
It is straightforward to fabricate on a standard CMOS process unlike eDRAM and avoids the unusual process steps and exotic materials of other approaches that drive up costs and lower yield.
Vertical Surrounding Gate Transistor (SGT)
SGT is a pivotal 3D transistor technology for semiconductor foundries and Integrated Device Manufacturers (IDM) looking to move beyond planar transistors and into the Gate-All-Around (GAA) era, expanding their addressable market while preserving their R&D budgets.
SGT contains several major innovations that significantly reduces silicon area and makes it particularly advantageous for ultra-low power designs, especially for memories such as SRAM, in contrast to current GAA implementations.
